COMPUTER MODELING OF SHIFT PROCESS OF POLARIZED ELECTRONS AND POSITRONS WITH ENERGY OF 120 GEV USING BENT SILICON CRYSTAL
Abstract
The shift process modeling of polarized electrons and positrons with energy of 120 GeV in a plane channel (110) of the bent silicon crystal was performed using the TROPICS software. It is shown that the best fit of the modeling and experiment results is achieved under the condition that the design constraint on angles of the particles entry into the crystal is twice as large as the experimental one. The results of the computer experiment show a high dependency of the degree of beam depolarization on the charge sign, thus electrons have no maximum in the distribution over angles of the spin rotation, and positrons maximum position corresponds to the theoretical evaluation calculated using the Lyuboshits V. L. formula.
About the Authors
V. P. Koshcheev
“Strela”, Zhukovsky Branch of the Moscow Aviation Institute (National Research University)
Russian Federation
Russian Federation
Yu. N. Shtanov
Surgut Oil and Gas Institute, Branch of Tyumen industrial University
Russian Federation
Russian Federation
D. A. Morgun
Surgut State University; System Research Institute, Russian Academy of Sciences
Russian Federation
Russian Federation
T. A. Panina
Surgut State University
Russian Federation
Russian Federation
References
1. Burmistrov L., Calderini G., Ivanov Yu., Massacrier L., Robbe1 P., Scandale W., Stocchi A. Measurement of Short Living Baryon Magnetic Moment using Bent Crystals at SPS and LHC // CERN-SPSC-2016-030. 2016. URL: http://cds.cern.ch/record/2194564 (дата обращения: 14.10.2017).
2. Gurevich G. M., Lukhanin A. A., Maas F., Plis Yu. A., Sidorin A. O., Smirnov A. V., Thomas A., Usov Yu. A. // In proceedings of “XVIth International Workshop in Polarized Sources, Targets and Polarimetry”, PSTP2015, 14-18 September 2015, Bochum, Germany. URL: https://pos.sissa.it/243/043/pdf (дата обращения: 14.10.2017).
3. Mazzolari A., Bagli E., Bandiera L., Guidi V., Backe H., Lauth W., Tikhomirov V., Berra A., Lietti D., Prest M., Vallazza E., De Salvador D. Steering of a Sub-GeV Electron Beam through Planar Channeling Enhanced by Rechanneling // Phys Rev Lett. 2014. V. 112. P. 135503. DOI: 10.1103/PhysRevLett.112.135503.
4. Wienands U., Markiewicz T. W., Nelson J., Noble R. J., Turner J. L., Uggerhøj U. I., Wistisen T. N., Bagli E., Bandiera L., Germogli G., Guidi V., Mazzolari A., Holtzapple R., Miller M. Observation of Deflection of a Beam of Multi-GeV Electrons by a Thin Crystal // Phys Rev Lett. 2015. V. 114. P. 074801. DOI: 10.1103/PhysRevLett.114.074801.
5. Bagli E., Guidi V., Mazzolari A., Bandiera L., Germogli G., Sytov A.I., De Salvador D., Berra A., Prest M., Vallazza E. Experimental evidence of independence of nuclear dechanneling length on the particle charge sign // Eur Phys J C. 2017. V. 77. №. 2. P. 71-76. DOI: 10.1140/epjc/s10052-017-4642-y.
6. Olive K. A., Agashe K., Amsler C. et al. Particle Data Group // Chin Phys C. 2015. V. 38. P. 090001.
7. Lyuboshits V. L. Spin rotation associated with deflection of relativistic charged particle in an electric field // Yadernaya Fizika. 1980. V. 31. № 4. P. 986-992.
8. Кощеев В. П., Штанов Ю. Н., Моргун Д. А., Панина Т. А. Моделирование процесса отклонения релятивистских электронов изогнутым кристаллом кремния // Письма в ЖТФ. 2015. Т. 41. Вып. 19. С. 55-63.
9. Marsaglia G., Bray T. A. A Convenient Method for Generating Normal Variables // SIAM Rev. 1964. V. 6. № 3. P. 260-264. DOI: 10.1137/1006063.
10. Штанов Ю. Н., Кощеев В. П., Моргун Д. А. TROPICS. Программный комплекс для моделирования траекторий движения быстрых заряженных частиц в кристаллах // Библиотека программ «JINRLIB». URL: http://wwwinfo.jinr.ru/programs/jinrlib/tropics/index.html (дата обращения: 14.10.2017).
11. Gemmel D. S. Channeling and related effects in the motion of charged particles through crystals // Rev Mod Phys. 1974. V. 46. № 1. P. 29-235.
12. Doyle P. A, Turner P. S. Relativistic Hartree-Fock X-ray and electron scattering factors // Acta Cryst A. 1968. V. 24. P. 390-397. DOI: 10.1107/S0567739468000756.
13. Штанов Ю. Н., Моргун Д. А., Фокин А. С. Свидетельство о государственной регистрации программы для ЭВМ № 2014618657. М. : Роспатент, 2014.
14. Линдхард Й. Влияние кристаллической решетки на движение быстрых заряженных частиц // УФН. 1969. Т. 99. Вып. 2. С. 249-296. DOI: 10.3367/UFNr.0099.196910c.0249.
15. Kitagawa M., Ohtsuki Y. H. Modified dechanneling theory and diffusion coefficients // Phys Rev В. 1973. V. 8. № 7. P. 3117-3123. DOI: 10.1103/PhysRevB.8.3117.
16. Кощеев В. П., Моргун Д. А., Панина Т. А., Штанов Ю. Н. Влияние квантовых флуктуаций на движение релятивистских протонов в кристаллах // Поверхность. Рентгенов., синхротрон. и нейтрон. исслед. 2012. № 12. С. 57-59.
Review
For citations:
Koshcheev V.P., Shtanov Yu.N., Morgun D.A., Panina T.A. COMPUTER MODELING OF SHIFT PROCESS OF POLARIZED ELECTRONS AND POSITRONS WITH ENERGY OF 120 GEV USING BENT SILICON CRYSTAL. Proceedings in Cybernetics. 2017;(4 (28)):83-91. (In Russ.)
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