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Koshcheev V.P., Shtanov Yu.N., Morgun D.A., Panina T.A. COMPUTER MODELING OF SHIFT PROCESS OF POLARIZED ELECTRONS AND POSITRONS WITH ENERGY OF 120 GEV USING BENT SILICON CRYSTAL. Proceedings in Cybernetics. 2017;(4 (28)):83-91. (In Russ.)

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ISSN 1999-7604 (Online)